IR-Si311 High Power 70 Watts Steady State 1025C Emitters (-P-2 and -E-2) with Parabolic or Elliptical Reflectors Optics:IR-Si311 emitter only, no optics 01 Hz Frequency Accuracy 0

01 Hz Frequency Accuracy  0

Cavity Ring-Down Spectroscopy (CRDS)

They are offered either as chip-on-carrier or encapsulated in a low power TO-66 package with collimated or divergent free-space beam output

Heatsink must be kept at 20°C with a thermal resistance 0

IR-Si311 High Power 70 Watts Steady State 1025C Emitters (-P-2 and -E-2) with Parabolic or Elliptical Reflectors Optics:IR-Si311 emitter only, no optics 01 Hz Frequency Accuracy 0Description Tech Specs Download PDF Item Description The IR Si311 is designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a silicon nitride material. The advanced technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength. When operated at 12 volts 70 watts the IR Si311 reaches 1025C. The IR Si311 P 2 emitters